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| TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 20V RDS(ON) (max) 1.3 ID(ON) (min) 0.5A VGS(th) (max) 1.0V Order Number / Package TO-92 TN0702N3 Features Low threshold -- 1.0 volt max On resistance guaranteed at VGS = 2, 3, and 5 volts High input impedance Low input capacitance --130pF typical Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Logic level interfaces Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Package Option Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* *Distance of 1.6 mm from case for 10 seconds maximum. BVDSS BVDGS 20V -55C to +150C 300C SGD TO-92 Note: See Package Outline section for dimensions. 03/11/02 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 TN0702 Thermal Characteristics Package TO-92 ID (continuous)* 0.53A ID (pulsed) 1.0A Power Dissipation @ TC = 25C 1W jc ja IDR* 0.53A IDRM 1.0A C/W 125 C/W 170 * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) V GS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 20 0.5 0.8 1.0 -4.0 100 100 100 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop 100 500 130 70 30 200 125 60 20 20 30 20 1.0 V VGS = 0V, ISD = 0.5A ns VDD = 20V, ID = 0.5A, RGEN = 25 pF VGS = 0V, VDS = 20V, f =1MHz 0.5 1.0 4.0 1.9 1.0 5.0 2.5 1.3 0.75 %/C m Typ Max Unit V V mV/C nA nA A A Conditions VGS = 0V, ID = 1mA VGS = VDS, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V, VDS = 0V VDS = 20V, VGS = 0V VDS = 0.8 Max Rating, VGS = 0V, TA = 125C VGS = VDS = 5V VGS = 2V, ID = 50mA VGS = 3V, ID = 200mA VGS = 5V, ID =500mA VGS = 5V, ID = 500mA VDS = 5V, ID = 500mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwide stated. (Pulse test: 300 s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 VDD RL OUTPUT D.U.T. TN0702 Typical Performance Curves Output Characteristics 5 4 VGS = 8V 5 4 VGS = 6V VGS = 5V 2 1 0 VGS = 4V VGS = 3V VGS = 2V 0 5 3 2 1 0 VGS = 6V VGS = 5V VGS = 4V VGS = 3V VGS = 2V 20 0 2 Saturation Characteristics VGS = 8V ID (amperes) VDS (volts) 10 15 ID (amperes) 3 VDS (volts) 4 6 8 10 Transconductance vs. Drain Current 2.0 V DS = 5V 2.0 Power Dissipation vs. Case Temperature GFS (siemens) PD (watts) 1.0 TA = -55C TA = 25C TA = 125C 1.0 TO-92 0 0 1 ID (amperes) 2 3 4 5 0 0 25 50 TC ( C) 75 100 125 150 Maximum Rated Safe Operating Area 10 1.0 Thermal Response Characteristics Thermal Resistance (normalized) 0.8 0.6 0.4 0.2 0 0.001 ID (amperes) 1.0 TO-92 (pulsed) TO-92 (DC) 0.1 TO-92 T C = 25C P D = 1W 0.01 TC = 25C 0.1 1 VDS (volts) 10 100 0.01 tp (seconds) 0.1 1 10 3 TN0702 BVDSS Variation with Temperature 1.2 On-Resistance vs. Drain Current BVDSS (normalized) 1.0 RDS(ON) (ohms) VGS = 2V VGS = 3V VGS = 5V 0.8 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 Tj (C) Transfer Characteristics 5 ID (amperes) V(th) and RDS Variation with Temperature 1.6 1.4 VDS = 5V 4 RDS(ON) @ 5V, 500mA 1.4 VGS(th) (normalized) 1.2 V(th) @ 1mA 1.2 ID (amperes) 3 TA = 25C 1.0 1.0 0.8 0.8 0.6 2 TA = 125C 1 0 0 2 4 6 8 10 -50 0 50 100 0.6 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 10 Tj (C) Gate Drive Dynamic Characteristics f = 1MHz 8 150 VDS = 10V CISS C (picofarads) VGS (volts) 200pF 6 100 COSS 50 4 VDS = 20V CRSS 2 146 pF 0 0 0 5 10 15 20 0 0.6 1.2 1.8 2.4 3.0 VDS (volts) QG (nanocoulombs) 02/06//02 (c)2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) TA = -55C |
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